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10-F0127PA025SC-L159E09 -    Compact Flow 0 housing

10-F0127PA025SC-L159E09_8894194.PDF Datasheet


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 Related Part Number
PART Description Maker
17570 17570-5 HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
VICOR[Vicor Corporation]
GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
GSI Technology
IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 From old datasheet system
32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
32K X 32 Flow-Through Ouputs SRAM
Integrated Device Technology
IDT
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构)
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构)
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
White Electronic Designs Corporation
18073 18073-5 HTSNK B X-FLOW .4H LOW FLOW THRU HOLE
HTSNK, B X-FLOW, .4H LOW FLOW THRU HOLE
VICOR[Vicor Corporation]
GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
GSI Technology
GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
GSI Technology, Inc.
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
15989 15989-A BOX 2.13X1.38X.58 W/CLP BLK
HTSNK B LONG .9H LOW FLOW, THREADED
HTSNK B LONG .9H LOW FLOW THREADED
VICOR[Vicor Corporation]
K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65 COMPUTER PRODUCT 256Kx36
256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36
Connector assemblies, Audio/RF/Video cables;
DELUX AUDIO RIGHT ANGLE CABLE
256Kx36 & 512Kx18-Bit Flow Through NtRAM
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
GSI Technology
 
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