| PART |
Description |
Maker |
| XP05555 |
TRANSISTOR | BJT | PAIR | NPN | 200MA I(C) | SOT-363 晶体管|晶体管|一对| npn型| 200毫安一（c）|的SOT - 363
|
Panasonic Industrial Solutions
|
| BAS16TW1T1 |
SOT-363 Plastic-Encapsulate Diodes
|
WILLAS ELECTRONIC CORP
|
| BAV70DW |
SOT-363 Plastic-Encapsulate Diodes
|
WILLAS ELECTRONIC CORP
|
| MMDT5451 |
SOT-363 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
| UMX1N |
SOT-363 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| AT32063 AT-32063-BLK AT-32063-TR1 |
AT-32063
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dANPNgWX^ cCE^CvSOT-363pbP[W
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| DDCXXXXU DDC114EU DDC114TU DDC114YU DDC123JU DDC12 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| DDAXXXXU DDA114EU DDA114TU DDA114YU DDA123JU DDA12 |
PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| DDA122LU DDA142JU |
(DDAxxxU) PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| DCX122LU-7-F DCX122TU-7-F DCX142TU-7-F DCX142JU-7- |
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes Inc.
|
