| PART |
Description |
Maker |
| AH1897 AH1897-FA-7 |
Analog - Sensors - Hall Effect Switches - Omnipolar Hall Effect Switches
HIGH SENSITIVITY MICROPOWER OMNIPLOAR HALL-EFFECT SWITCH
|
Diodes Incorporated
|
| ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
|
| AH1822-FT4G-7 AH1822-FU4G-7 |
MICROPOWER OMNIPOLAR HALL EFFECT SWITCH
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-5.5mT, 0.30V, RECTANGULAR, SURFACE MOUNT GREEN, DFN3020H4-6
MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| HAL800 HAL800UT-A HAL800UT-K |
Programmable Linear Hall Effect Sensor 可编程线性霍尔效应传感器
Programmable Linear Hall Effect Sensor MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT
|
Micronas Semiconductor Holding AG
|
| OH3075U |
Hallogic Hall-effect Sensors MAGNETIC FIELD SENSOR-HALL EFFECT, -25-25mT, 100-400mV, RECTANGULAR, THROUGH HOLE MOUNT
|
TT electronics OPTEK Technology
|
| AH277A AH277AZ4-AE1 AH277AZ4-BE1 AH277AZ4-CE1 |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing, Ltd.
|
| HAL54X HAL542SF-E HAL542SF-K HAL543SF-E HAL543SF-K |
Hall-Effect Sensor Family
MAGNETIC FIELD SENSOR-HALL EFFECT, 15-33mT, 0-20mA, RECTANGULAR, SURFACE MOUNT
|
MICRONAS SEMICONDUCTOR HOLDING AG
|
| AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY |
Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN
Hall-Effect Sensor Family
|
Micronas Semiconductor Holding AG
|
| AH172 AH172-WA AH172-WAA AH172-WAB AH172-WLA AH172 |
V(cc): 20V; V out(off): 20V; I(s): 20mA; imternal pull-up hall effect latch. For rotor position sensing, current switch, encoder, RPM detection
Internal Pull-up Hall Effect Latch 内部上拉霍尔效应锁存
|
Anachip Corp
Intel, Corp.
|
