PART |
Description |
Maker |
2729-300P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-370V |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
MDS800 |
RF Power Transistors: AVIONICS MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology Microsemi, Corp.
|
RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
VTU-5192F1 |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|