| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| SCS108AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| SCS106AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
