| PART |
Description |
Maker |
| TC514102AJ-60 TC514102AP TC514102AP-60 TC514102ASJ |
T-NPN- SI-LO-NOISE
4,194,304 x 1 BIT DYNAMIC RAM
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BV03CL |
Low clamping voltage
|
Shenzhen Bencent Electr...
|
| SMS05 |
Low clamping voltage
|
Shanghai Leiditech Elec...
|
| BV03CW |
Low clamping voltage
|
Shenzhen Bencent Electr...
|
| ESDALC6V1-1BT2 |
TVS Clamping Arrays
|
ST Microelectronics, Inc.
|
| 3381P |
Low ESD clamping voltage
|
Gennum Corporation
|
| GTO2940-12RP |
GTO Clamping Capacitors, Self-healing, Segmented
|
VISAY[Vishay Siliconix]
|
| SDA2AK07 SDA2AK |
Surface mount bidirectional Clamping Diodes
|
Diotec Semiconductor
|
| NTE4868 NTE4828 |
Surge Clamping, Transient Overvoltage Suppressor Unidirectional
|
NTE[NTE Electronics]
|
| BAS70-07L4 |
SMD Diodes for clamping, rectifying, protection and switching applications
|
Infineon
|
