| PART |
Description |
Maker |
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BR34E02NUX-3 BR34E02NUX-3TR |
DDR2/DDR3 SPD EEPROM
|
ROHM
|
| TISP4A265H3BJ TISP4A265H3BJR-S TISP4A265H3BJ-07 |
ASYMMETRICAL BIDIRECTIONAL THYRISTOR SPD
|
Bourns Electronic Solutions
|
| W3DG7263V7D2 W3DG7263V10D2 W3DG7263V75D2 W3DG7263V |
512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3DG7266V7D2 W3DG7266V10D2 W3DG7266V75D2 W3DG7266V |
512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3DG72128V75D2 W3DG72128V-D2 W3DG72128V7D2 W3DG721 |
1GB- 128Mx72 SDRAM, REGISTER and SPD, w/PLL
|
White Electronic Designs Corporation
|
| W3DG7266V-D2 |
512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
|
http://
|
| M464S0924BT1 M464S1724BT1SDRAMSODIMM |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| STTS424E02BDA6E STTS424E02BDA6F STTS424E02BDW6E ST |
Memory module temperature sensor with a 2Kb SPD EEPROM
|
STMicroelectronics
|
| SES900 SE97 |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
| 53013-1 |
Ring and Spade Tongue Terminals; TERMINAL,BUDG SPR SPD 12-10 5 ( AMP )
|
Tyco Electronics
|
