| PART |
Description |
Maker |
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| ELS-316GWB |
Technical Data Sheet 0.36 Single Data Displays 技术数据表0.36单数据显
|
Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
|
| F-137G |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| S1A0905X01 |
RDS (RADIO DATA SYSTEM) DEMODULATOR IC Data Sheet
|
Samsung Electronic
|
| MC68HC908JB12 MC68HC908JB12DW MC68HC908JB12JDW MC6 |
Addendum to MC68HC908JB16 Technical Data
This section updates data sheet information and introduces the 20-pin SOIC
|
FREESCALE[Freescale Semiconductor, Inc]
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| ST7FDALIF2B6 |
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI (DATA BRIEFING)
|
SGS Thomson Microelectronics
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| AT-45DB081B 45DB081B |
AT-45DB081B DATA FLASH RELIABILITY DATA
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
