| PART |
Description |
Maker |
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| MAX1836 MAX1836EUT33 MAX1836EUT33-T MAX1836EUT50 M |
CHOKE COIL 100UH 600MA SMD
24V Internal Switch / 100% Duty Cycle / Step-Down Converters
From old datasheet system
DC/DC CONVERTER, 3.3V,BICMOS,TSOP,6PIN
"24V Internal Switch, 100% Duty Cycle, Step-Down Converters"
|
Maxim Integrated Products, Inc.
Maxim Integrated Products Inc
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| IR2085SPBF IR2085S |
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER 高速，100V的，自振0％的占空比，半桥驱动
HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER
HIGH SPEED 100V SELF OSCILLATING 50% DUTY CYCLE HALF-BRIDGE DRIVER
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| SWE12900 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE61800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE121600 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE121500 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE12180 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
|
