PART |
Description |
Maker |
14N60 |
Drain Current ID= 14A@ TC=25C
|
Inchange Semiconductor ...
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
HGT1S14N37G3VLS HGTP14N37G3VL |
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
|
Intersil Corporation
|
2SK996 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1172 |
Drain Current ?ID=3.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1010 |
Drain Current ?ID=6A@ TC=25C
|
Inchange Semiconductor ...
|
2SK987 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1601 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1603 |
Drain Current ?ID= 2.5A@ TC=25C
|
Inchange Semiconductor ...
|