PART |
Description |
Maker |
HMCAB120G HMCAB112G HMCAB132G HMCAB182G HMCAB184G |
HIGH DENSITY CARD EDGE .050 [1.27] VESA MICRO CHANNEL ARCHITECTURE (MCA)
|
Adam Technologies, Inc.
|
CY7C1474BV33-200BGC |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 1M X 72 ZBT SRAM, 3 ns, PBGA209
|
Cypress Semiconductor, Corp.
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
HGN-375-10M-F1 HGN-375-10M-F2 HGN-375-4M-F1 HGN-37 |
IEC 60320 INLET SOCKET WITH SWITCH, SINGLE AND DOUBLE FUSE HOLDER, FLANGE MOUNT 4A, 125/250VAC, MALE, MAINS POWER CONNECTOR, QUICK CONNECT, PLUG 1A, 125/250VAC, MALE, MAINS POWER CONNECTOR, QUICK CONNECT, PLUG
|
PowerDynamics, Inc POWER DYNAMICS INC
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM) 64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture From old datasheet system
|
Cypress Semiconductor Corp.
|
CY7C1334 7C1334 |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM) From old datasheet system 64Kx32 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
|
CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100 4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|