PART |
Description |
Maker |
IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 21A条(丁)|18VAR TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五(巴西)直| 18A条(丁)|
|
IXYS, Corp.
|
STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA USB Port Lithium-Ion/Polymer Battery Charger 2A Lithium-Ion/Polymer Battery Charger TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA NanoPower Voltage Detectors TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA 1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 11A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五(巴西)直| 2.8AI(四)|04AA
|
Atmel, Corp.
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
|
STD1NA60 3633 STD1NA60-1 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 N-CHANNEL POWER MOSFET
|
http:// STMicroelectronics ST Microelectronics
|
FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-channel TrenchMOS(TM) transistor Logic Level FET N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor
|
Philips NXP Semiconductors
|
BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
|
IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 6.7AI(四)|63AB
|
Sumida, Corp.
|
IRFPG22 IRFPE32 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.5A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 3.4AI(四)|47AC
|
Fairchild Semiconductor, Corp.
|
NSFY30509 NSFY30942 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 900V五(巴西)直| 3A条(丁)|57
|
Harwin PLC
|