| PART |
Description |
Maker |
| ESJA02-02S-17 |
20mA 2.0kV 100nS SUBMINIATURE HIGH VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC...
|
| M1346 |
VDD CONTROL RGB LED IC
|
MOSDESIGN SEMICONDUCTOR CORP
ETC[ETC]
|
| EM44CM1688LBB-3F EM44CM1688LBB-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44DM0888LBA EM44DM0888LBA-187F EM44DM0888LBA-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44CM1688LBC-25E EM44CM1688LBC-3 EM44CM1688LBC-3I |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
| XCM410AA01MR-G XCM4101 |
2 Channel Voltage Detector (Sense Pin separated from VDD)
|
Torex Semiconductor
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F |
Triple 4-3-3-Input NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50
DIODE ZENER SINGLE 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-323 3K/REEL
DIODE ZENER SINGLE 150mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-363 3K/REEL
DIODE ZENER SINGLE 350mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-23 3K/REEL
DIODE ZENER SINGLE 150mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER SINGLE 350mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-23 3K/REEL
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-SOIC 0 to 70
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
DIODE ZENER DUAL ISOLATED 200mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-323 3K/REEL
DIODE ZENER SINGLE 350mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-23 3K/REEL
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER TRIPLE ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER DUAL ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER SINGLE 200mW 6.2Vz 20mA-Izt 0.05 5uA-Ir 4 SOT-323 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存8位CMOS微控制器采用纳瓦技
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-PDIP 0 to 70 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| MT8814 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) =4.5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|
