| PART |
Description |
Maker |
| NTMFS08N004C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDMS86252L |
150V N-Channel Shielded Gate PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| 558-7106 558-7106-16-00-00 558-7106-11-00-00 |
Variable Coil, Shielded, Vertical, .09μH thru 12.0mΗ
SHIELDED, 8 uH - 12 uH, VARIABLE INDUCTOR
SHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
|
