| PART |
Description |
Maker |
| AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-41400 AT-41400-GP4 AT-41400-G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| INA-50311 INA-50311-BLK INA-50311-TR1 |
1 GHz的硅单片低噪声放大器
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
|
| Q62702-F788 A0536 BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
From old datasheet system
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range and broadband analog and digital applications)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管（星展混合器的应用10 GHz低噪声系数低屏障型）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier
GT 14C 14#16 SKT PLUG
1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
| UPC2713T-E3 UPC2713T |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
Duracell
NEC[NEC]
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
