PART |
Description |
Maker |
AM-162PIN AMC-162SMA AMC-AMS-162 AMS-162PIN |
10-100 MHz, low noise amplifier, 12.5 dB gain Low Noise Amplifier/ 12.5 dB Gain/ 10 - 100 MHz JT 12C 8#20 4#16 SKT RECP Circular Connector; No. of Contacts:18; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No Low Noise Amplifier, 12.5 dB Gain, 10 - 100 MHz
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MA-Com Tyco Electronics
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EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC Ultra-Low Noise Low Power Wideband Amplifier
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INTERSIL[Intersil Corporation]
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K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125 Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
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Intersil Corporation
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IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9)同步双端口RAM High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68 High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68 High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125 HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM From old datasheet system
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier 16?2 GHz Low Noise Amplifier
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
L1935 |
Low Noise Amplifier 1800-1950 MHz, 35 dB Gain, 0.9dB Noise Figure
|
PDI[PREMIER DEVICES, INC.]
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2N3799 |
PNP,Low Noise Amplifier Transistor(低噪声、放大器型PNP晶体 PNP LOW NOISE AMPLIFIER TRANSISTOR PNP, LOW NOISE AMPLIFIER TRANSISTOR
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
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2N3799X |
PNP,Low Noise Amplifier Transistor(低噪声、放大器型PNP晶体 PNP LOW NOISE AMPLIFIER TRANSISTOR PNP, LOW NOISE AMPLIFIER TRANSISTOR
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TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
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