| PART |
Description |
Maker |
| IS42SM32400F-75BLI IS42SM32400F-75BLI-TR |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
Auto refresh and self refresh
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| IS42VM16160K |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| HM5165805FL HM5165805FLJ-6 HM5165805FTT-5 HM516580 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
HITACHI[Hitachi Semiconductor]
|
| HM5164165FTT-5 HM5165165FTT-5 HM5164165FTT-6 HM516 |
64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword 隆驴 16-bit) 8k refresh/4k refresh
|
Elpida Memory
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| LT3420 LT3420EMSTRPBF LT3420-1 |
Photoflash Capacitor Chargers with Automatic Refresh
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
|
Linear Technology, Corp.
Linear Technology Corporation
|
| HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
|
Hitachi,Ltd.
|
