| PART |
Description |
Maker |
| GLT41316-50J3 GLT41316-50FC GLT41316-12P GLT41316- |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 64K的16的CMOS动态RAM的快速页面模
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K的16的CMOS动态RAM的快速页面模
3.0V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125
2.5V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125
3.3V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
4.096V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.3V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
1.25V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.048 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
4.096V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.5V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
3.3V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.048V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.0V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.0V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
Enhanced Product 4 Ppm/Degreesc 100 Ua Sot23-6 Series Voltage References 6-SOT-23 -55 to 125
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
|
| 376 |
DIODE SCHOTTKY DUAL-DUAL SERIES 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL
|
Intel Corp.
|
| BAV99WT1 BAV99RWT1 ON0136 BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type
SC-70/SOT-323 Dual Series Switching Diode
BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23
From old datasheet system
|
ROHM
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAR64V-04W BAR64V-04W-GS08 BAR64V-04W-GS18 |
RF PIN Diodes - Dual, Series in SOT-323
|
Vishay Siliconix
|
| FMMTA13TA FMMTA13TC UFMMTA13TC |
300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| 2SC3980 2SC3980A |
DIODE SWITCHING DUAL SERIES 50V 300mA-Io 350mW 4ns-trr SOT-23 3K/REEL
Silicon NPN triple diffusion planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70 |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
|
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| OPF540 |
High PSRR 300 mA LDO, Vin 10V max, Vout =0.9V, -40C to 85C, 5-SOT-23, T/R 光纤接收
|
Fujitsu, Ltd.
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| HSMP-3816-BLKG DEMO-HSMP-38X6 |
Quad PIN Diode Attenuator 300 kHz to 4 GHz in SOT 25 Package
Quad PIN Diode π Attenuator 300 kHz to 4 GHz in SOT 25 Package
|
AVAGO TECHNOLOGIES LIMITED
Broadcom Corporation.
|
| DZ23C24 DZ23C51 DZ23C3V0 DZ23C2V7 DZ23C DZ23C10 DZ |
surface mount silicon Zener diodes 表面贴装硅稳压二极管
300 mW Dual Surface Mount Zener Diode(功率损00mW的表贴型齐纳二极 300毫瓦，表面安装双齐纳二极管（300mW的功率损耗的表贴型齐纳二极管
300 mW Dual Surface Mount Zener Diodes
From old datasheet system
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
|
|
