| PART |
Description |
Maker |
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| HGT1S20N35G3VLS HGT1S20N35G3VL HGTP20N35G3VL FN400 |
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
From old datasheet system
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SVT200-5C SVT250-5C SVT350-5C SVT450-5C SVT400-5C |
Silicon Bridge Rectifiers
Fast Recovery Bridge Rectifiers
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 5A I(C) | TO-3
晶体管|晶体管|叩| 350V五（巴西）总裁| 5A条一c）|3
晶体管|晶体管|叩| 300V五（巴西）总裁| 5A条一c）|3
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 10A条一（c）|
|
Jameco Electronics
|
| PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
| PDTC114Y PDTC114YEF PDTC114YK PDTC114YM PDTC114YS |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PLASTIC, SC-89, 3 PIN
NPN resistor-equipped transistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA
USB Port Lithium-Ion/Polymer Battery Charger
2A Lithium-Ion/Polymer Battery Charger
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA
NanoPower Voltage Detectors
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA
1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 11A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五（巴西）直| 2.8AI（四）|04AA
|
Atmel, Corp.
|
| 3JQ300-R 3JQ350-R 2JQ300-R |
Fuses, RoHS 300mA 350V FAST 2AG LEADED FAST BLOW ELECTRIC FUSE, 0.3A, 350VAC, 140VDC, 100A (IR), THROUGH HOLE
Fuses, RoHS 350mA 350V FAST 2AG LEADED FAST BLOW ELECTRIC FUSE, 0.35A, 350VAC, 140VDC, 100A (IR), THROUGH HOLE
Fuses, RoHS 300mA 350V FAST 2AG FAST BLOW ELECTRIC FUSE, 0.3A, 350VAC, 140VDC, 100A (IR), INLINE/HOLDER
|
Bel Fuse, Inc.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
|
