| PART |
Description |
Maker |
| 2N5427 2N5428 2N3766 2N3767 2N3738 2N4240 2N4900 2 |
75 OHM BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 10 - 1,000 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM
POWER TRANSISTORS
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| CXXXTR3547-SXX00 |
Rectangular LED RF performance Maximum DC forward current 150 mA
|
Cree, Inc
|
| 2N5952 2N5952D74Z |
N-Channel RF Amplifier
N-Channel RF Ampifier
BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 8; FREQUENCY RANGE: 2 - 500 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM INSERTION
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| KB25MKG01B05BB KB25MKG01B12A KB25MKW01-05-A KB25MK |
0.4VA maximum 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A 20mV ~ 28V)
Miniature Pushbuttons
|
Nihon Kaiheiki Industry Co. Ltd.
|
| SHD11624608 SHD116246B |
HERMETIC POWER SCHOTTKY RECTIFIER 200掳C Maximum Operation Temperature
HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature
|
Sensitron
|
| BCR16CM-12LB BCR16CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| AN-1028 |
Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs
|
Fairchild Semiconductor
|
| AN-1025 |
Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs
|
Fairchild Semiconductor
|
| AN-1026 |
Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs
|
Fairchild Semiconductor
|
| QEB75-48S05 QEB75-24S05 QEB75-24S12 QEB75-24S3P3 Q |
75 WATTS MAXIMUM OUTPUT POWER
|
Power Mate Technology Co., LTD
Power Mate Technology C...
|
| FEC30-24D12W FEC30-24D15W FEC30-24S05W FEC30-24S12 |
30 WATTS MAXIMUM OUTPUT POWER
|
Power Mate Technology Co., LTD
Power Mate Technology C...
|
