| PART |
Description |
Maker |
| IKQ40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKQ75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| ZXGD3006 ZXGD3006E6 |
High current 40V Gate Driver reduces IGBT switching losses
|
Diodes Incorporated
|
| IGC168T170S8RH |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| IRGS4064DPBF |
Low Switching Losses Square RBSOA
|
International Rectifier
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| KGT15N135NDH |
KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.
|
KEC(Korea Electronics)
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
