| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6 |
VDD/VDDQ= 2.5V ± 0.2V
|
Eorex Corporation
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
| 2SK3305 |
Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)
|
TY Semiconductor Co., L...
|
| ISL12020 ISL12020CBZ ISL12020IBZ |
Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation 【5ppm with Auto Day Light Saving
|
Intersil Corporation
|
| ISL12020 ISL12020CBZ ISL12020IBZ ISL12020IBZ-T |
REAL TIME CLOCK, PDSO8
Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation ±5ppm with Auto Day Light Saving
|
Intersil Corporation
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
