| PART |
Description |
Maker |
| HB28L064RM3 HB28J128MM3 HB28J128RM3 HB28J256MM3 HB |
MultiMediaCard 32 MByte/64 MByte/128 MByte/256 MByte/512 MByte
|
RENESAS[Renesas Electronics Corporation]
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| HB28E016MM2 HB28B128MM2 HB28D032MM2 HB28D064MM2 |
MultiMediaCard 16 Mbyte/32 Mbyte/64 Mbyte/128 MByte
|
HITACHI[Hitachi Semiconductor]
|
| SMC512AF |
(SMCxxxAF) 256 Mbyte and 512 Mbyte 3.3V / 5V supply CompactFlash card
|
Numonyx
|
| S25FL512S S25FL512SAGBHI313 S25FL512SAGMFI010 |
512 Mbit (64 Mbyte) MirrorBit? Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O
|
SPANSION
|
| M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| S29GL256N |
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
|
Cypress Semiconductor
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
|
| HB28D096C6 HB28D032C6 |
CompactFlash?/a> 96 MByte/32 MByte
Compact Flash
|
Hitachi Semiconductor
|
| M29W800DB45N1E M29W800DB M29W800DB45M1E M29W800DB4 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
