| PART |
Description |
Maker |
| IPB180N10S4-02 |
OptiMOSTM-T2 Power-Transistor
|
Infineon Technologies A...
|
| BSC094N06LS5 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| BSZ099N06LS5 |
OptiMOSTM Power-Transistor,60V
|
Infineon Technologies A...
|
| BSC032NE2LS-13 |
OptiMOSTM Power-MOSFET
|
Infineon Technologies A...
|
| BSZ068N06NS |
OptiMOSTM Power-Transistor
|
Infineon Technologies A...
|
| IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| KTD921 |
Darlington Transistor
TRIPLE DIFFUSED NPN TRANSISTOR (COLOR & B/W TV POWER SUPPLY, INDUSTRIAL USE POWER SUPPLY, GENERAL PURPOSE POWER AMPLIFIER DARLINGRON TRANSISTOR)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
