| PART |
Description |
Maker |
| PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| PS21962-A PS21962-C |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-ST09 PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| IGB30N60H3 |
600V high speed switching series third generation
|
Infineon Technologies AG
|
| PS21963-4ES PS21963-4ES09 |
Dual-In-Line Package Intelligent Power Module
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| BYC8-600 |
Hyperfast rectifier diode, low switching loss
|
NXP Semiconductors
|
| BYC8B-600 |
Rectifier diode ultrafast, low switching loss
Rectifier diode ultrafast/ low switching loss
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BYC10B-600-15 |
Rectifier diode ultrafast, low switching loss
|
NXP Semiconductors
|
| BSM200GAL120DLC |
62mm C-series module with low loss IGBT2 and EmCon diode
|
eupec GmbH
|
| PS21962-4S PS21962-4S09 |
Dual-In-Line Package Intelligent Power Module
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
