| PART |
Description |
Maker |
| 99161 60N60B2 60N60B2D1 IXGR60N60B2 IXGR60N60B2D1 |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFC15N80Q |
HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface
|
IXYS[IXYS Corporation]
|
| IXGC16N60B2D1 |
28 A, 600 V, N-CHANNEL IGBT PLASTIC, ISOPLUS220, 3 PIN
Electrically Isolated Back Surface
|
IXYS, Corp.
IXYS Corporation
|
| IXTF1N400 |
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXGR32N60C |
HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)
|
IXYS Corporation
|
| IRFK2D054 IRFK2D250 IRFK2F054 IRFK2D150 IRFK2D350 |
100V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
Isolated Base Power HEX-pak Assembly-Half Bridge Configuration
|
IRF[International Rectifier]
|
| DSEP30-12CR L373 |
HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) 30 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| IRFK4H250 IRFK4J250 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
|
International Rectifier
|
| AM29C833ASC |
600 MIL PLA SO GULL-WG CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO24
|
Advanced Micro Devices, Inc.
|
| IRFK2D450 IRFK2F450 |
500V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
|
IRF[International Rectifier]
|
