| PART |
Description |
Maker |
| AFT05MS004N AFT05MS004NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
High avalanche ruggedness
|
ST Microelectronics
STMicroelectronics
|
| STH140N8F7-2 |
High avalanche ruggedness
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL11N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STL92N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL20N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STD105N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STP110N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL60R1K5C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA50R500CE IPA50R500CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
