| PART |
Description |
Maker |
| AFT05MS003N |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| MRFE6VP61K25HR6 MRFE6VP61K25HSR6 |
RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
|
Freescale Semiconductor, Inc
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL120N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA60R400CE IPD60R400CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP80N6F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL66N3LLH5 |
High avalanche ruggedness
|
STMicroelectronics
|
