| PART |
Description |
Maker |
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AD73311ARS AD73311ARZ AD73311LARUZ-RL7 |
Low Cost/ Low Power CMOS General Purpose Analog Front End
Single-Channel, 3 V and 5 V Front-End Processor for General Purpose Applications Including Speech and Telephony; Package: SOIC - Wide; No of Pins: 20; Temperature Range: Industrial SPECIALTY TELECOM CIRCUIT, PDSO20
Low Cost, Low Power CMOS General Purpose Analog Front End
|
Analog Devices, Inc.
|
| ICL762101 ICL7621DCPA ICL7621 ICL7621BCPA ICL7621D |
Op Amp, CMOS, Rail-to-Rail Output, Low Voltage 1-8Vdc, Rin=10E12, Ibias=1pA, Dual
Dual, Low Power CMOS Operational Amplifiers
|
INTERSIL[Intersil Corporation]
|
| BXB50-24S15FLT BXB50-48S05FLT BXB50-48S3V3FLT BXB5 |
Low voltage CMOS octal bus buffer (3-state inv.) with 5V tolerant inputs DC至DC转换
Low voltage CMOS 16-bit D-type latch (3-state) with 5 V tolerant inputs
Low voltage CMOS quad 2 channel multiplexer (3-state) with 5V tolerant inputs
Low voltage CMOS dual 4-input NAND gate with 5 V tolerant inputs
Low voltage CMOS triple 3-input NOR gate with 5V tolerant inputs
Low voltage CMOS dual 2 to 4 decoder/demultiplexer
Low voltage CMOS octal bus buffer with 3 state outputs (non inverted)
Low voltage quad 2 channel multiplexer with 5V tolerant inputs
Low voltage CMOS hex Schmitt inverter with 5V tolerant inputs
33-50W Wide Input DC/DC Converters
|
3M Company
ARTESYN[Artesyn Technologies]
|
| AD8663ACPZ-R2 AD8663ACPZ-RL |
16V, 180A Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180レA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| AS6VA5128-BI AS6VA5128 AS6VA5128-BC |
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 3.3V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM 2.7V.3V12k × 8 Intelliwatt低功耗CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Alliance Semiconductor Corporation
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
