| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| SCT3030KL SCT3030KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| SCT3080KL SCT3080KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| C2D20120 C2D20120D |
Silicon Carbide Schottky Diode
|
List of Unclassifed Manufacturers
ETC
|
| SDT05S60 Q67040S4644 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
|
| SHD625051 SHD625051P SHD625051D SHD625051N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| SHD618112AN SHD618112AP SHD618112BN SHD618112BP SH |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
| IDM10G120C5-15 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
|
