| PART |
Description |
Maker |
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| 19037-0004 64001-1400 19038-0007 19039-0007 19033- |
PVC and Nylon Insulated Bullet Snap Plug and Receptacle, and Insulated Double Bullet Snap Coupler and Non-Insulated Bullet Snap Plug and Receptacle
|
MolexKits
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| 2-1191566-7 2-1190527-4 2-1191560-6 014389-000 2-1 |
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATED COPPER, LIGHTWEIGHT
WIRE RADIATIONN-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
|
Tyco Electronics
|
| RM150DZ-24 RM150DZ-2H RM150DZ-H RM150DZ-M RM150UZ- |
HIGH POWER GENERAL USE INSULATED TYPE
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SLA 12V 7AH .250 TERM 大功率常规使用绝缘型
ADAPTOR 0.187 TO 0.250 TERMINAL 大功率常规使用绝缘型
Insert strip for laser printer, lettering field: 62 x 10 mm - ESL 62 X 10 大功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
