PART |
Description |
Maker |
AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
|
GVT72512A8 |
REVOLUTIONARY PINOUT 512K X 8
|
Galvantech
|
GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16 From old datasheet system
|
Galvantech
|
GVT73512A8 73512A8S |
REVOLUTIONARY PINOUT 512K X 8 From old datasheet system
|
Galvantech
|
GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16 From old datasheet system
|
Galvantech
|
SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B- |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
SPI07N60S5 SPP07N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP20N60CFD05 SPP20N60CFD |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|