| PART |
Description |
Maker |
| AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29BDD160G |
(16 Megabit (1 M x 16-bit/512 K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Wr
From old datasheet system
|
AMD Inc
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| BS640GTD9V AM29BDS640G AM29BDS640GBC3WSI AM29BDS64 |
64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29N323DT11AWKI AM29N323D |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29BDS323D AM29BDS323DT11AWKI |
From old datasheet system
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
|
| S29CD016G0JFAI013 S29CD016G0J S29CD016G S29CD016G0 |
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
| AM29BDS640GBD9WSI AM29BDS640GTD9WSI AM29BDS640GTD3 |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
|
Spansion Inc.
Spansion, Inc.
|
| CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
