| PART |
Description |
Maker |
| RQ5E040AJ |
Nch 30V 4A Middle Power MOSFET
|
Rohm
|
| RSS090N03FRA |
Nch 30V 9A Middle Power MOSFET
|
Rohm
|
| RQ3E160ADTB |
Nch 30V 16A Middle Power MOSFET
|
ROHM
|
| RQ3E180AJ |
Nch 30V 18A Middle Power MOSFET
|
Rohm
|
| QS8J4FRA QS8J4FRATR |
-30V Pch Pch Middle Power MOSFET
|
ROHM
|
| 2SCR514PFRA |
Middle Power Transistor (80V / 0.7A)
|
Rohm
|
| 2SCR533D 2SCR533PT100 |
NPN 3.0A 50V Middle Power Transistor
|
Rohm
|
| HP8MA2 |
30V Nch Pch Middle Power MOSFET
|
Rohm
|
| 2SAR340P |
PNP -100mA -400V Middle Power Transistor
|
ROHM
|
| FZT489TA FZT489QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
