| PART |
Description |
Maker |
| HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HGTP12N60B3 HGT1S12N60B3S FN4410 |
From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs
|
INTERSIL[Intersil Corporation]
|
| IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
| APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRGPC50UD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V @Vge=15V Ic=27A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| FDH27N50 |
27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET
Discrete Commercial N-Channel SMPS Power MOSFET, 500V, 27A, 0.19 Ohms @ VGS = 10V, TO-247 Package
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTP12N60B3D HGT1S12N60B3DS |
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| B592-2T B593-2T B534E2T B634E2T B543E2T B512E2T B5 |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|240V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|46A I(T)
THYRISTOR MODULE|AC SWITCH|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|AC SWITCH|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|120V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|440V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |加利福尼亚州| 440V五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |消委会| 120伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|280V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD | 280伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|440V V(RRM)|46A I(T) 晶闸管模块|桥|半CNTLD |消委会| 440V五（无线资源管理）| 46A条疙（T
|
ITT, Corp.
Crydom, Inc.
Astrodyne, Inc.
California Eastern Laboratories, Inc.
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011LVFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
