| PART |
Description |
Maker |
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| ADL532008 ADL5320-EVALZ ADL5320ARKZ-R7 ADL5320 |
400 MHz to 2700 MHz Pre-driver RF Amplifier 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
400 MHz to 2700 MHz RF Driver Amplifier
|
Analog Devices, Inc.
|
| CGHV27030S |
GaN HEMT
|
CREE
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CFG40006S-AMP1 |
6 W, RF Power GaN HEMT, Plastic
|
Cree, Inc
|
|
