| PART |
Description |
Maker |
| IXYK140N90C3 |
XPTTM 900V IGBTs
|
IXYS Corporation
|
| HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
| STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| IXXH40N65B4H1 |
XPTTM 650V IGBT
|
IXYS Corporation
|
| IXYT20N120C3D1HV |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXXH30N60B3 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXYA20N65C3D1 |
XPTTM 650V IGBT
|
IXYS Corporation
|
| IXYR50N120C3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
