| PART |
Description |
Maker |
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| 0405-500L |
CW Class C 1 Ghz
|
Microsemi
|
| 10AM05 |
CW Class A/AB 1 Ghz
|
Microsemi
|
| 87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz
87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz
87300D Coaxial Directional Coupler, 6 to 26.5 GHz
87301B Coaxial Directional Coupler, 10 to 46 GHz
87300B Coaxial Directional Coupler, 1 GHz to 20 GHz
87301D Coaxial Directional Coupler, 1 GHz to 40 GHz
87301C Coaxial Directional Coupler, 10 to 50 GHz
87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| ECQU2A125L ECQU2A394L ECQU2A392L ECQU2A103L ECQU2A |
In accordance with UL/CSA and European safety regulation class X2 or class Y2/X2
|
Panasonic Semiconductor
|
| MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 |
RF Power Field Effect Transistors
The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
|
Freescale Semiconductor, Inc
MOTOROLA
|
| WKO392 WKO102 WKO152 WKO222 WKO222MCPCRAKR WKO330 |
AC Line Rated Ceramic Disc Capacitors Class X1, 440 VAC, Class Y2, 300 VAC
|
Vishay Siliconix
|
| F1746-3511/3411/3581/3481 |
Class X1 - AC275V; Class Y2 - AC250V
|
Vishay
|
| FAB2200UCX |
Audio Subsystem with Stereo Class-G Headphone Amplifier and 1.2W Mono Class-D Speaker Amplifier
|
Fairchild Semiconductor
|
