| PART |
Description |
Maker |
| BD8200YS BD840YS BD845YS BD860YS BD890YS BD8100YS |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
8 A, 40 V, SILICON, RECTIFIER DIODE, TO-252 ROHS COMPLIANT, PLASTIC, DPAK-3
8 A, 60 V, SILICON, RECTIFIER DIODE, TO-252
8 A, 45 V, SILICON, RECTIFIER DIODE, TO-252
|
Pan Jit International Inc.
NXP Semiconductors N.V.
|
| IDD03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| FDFC2P100 |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FS10ASH2 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-252 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 10A条（丁）|252
|
Cypress Semiconductor, Corp.
|
| FS10AS03 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 10A条（丁）|252
|
Cypress Semiconductor, Corp.
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| MUR860D |
Ultrafast Recovery Diode in a TO-252 Plastic Package
|
Foshan Blue Rocket Elec...
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAT17 BAT17-05W BAT17-06 BAT17-07 BAT17-04 BAT17-0 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
