| PART |
Description |
Maker |
| MIC-6313-A1A4E |
OpenVPX CPU Blade with Intel? 4th/ 5th Generation Core? Processor
|
Advantech Co., Ltd.
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC14 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SML5020BN |
4TH GENERATION MOSFET
|
SEME-LAB[Seme LAB]
|
| GT30J122 |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT60N321 EA09964 |
High Power Switching Applications The 4th Generation
From old datasheet system
|
Toshiba
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| USB2601 USB2602-NU-03 USB2601-NE-03 USB2601-NU-03 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS AND HS HUB
|
SMSC[SMSC Corporation]
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| R4-SXDP-20FR-R1 |
4th Generation Bearing ?MTBF of 160,000 hours thanks to highly durable POM components.
|
List of Unclassifed Man...
|
