PART |
Description |
Maker |
LBSS139DW1T1G S-LBSS139DW1T1G LBSS139DW1T3G |
Power MOSFET200 mAmps, 50 Volts N?Channel SC-88
|
Leshan Radio Company
|
NTES1P02 NTES1P02-D |
P?Channel Power MOSFET Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
LMGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts
|
LRC[Leshan Radio Company]
|
LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
BSS138LT1 |
N-CHANNEL POWER MOSFET Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 From old datasheet system
|
ON Semiconductor
|
X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32 SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28 RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28 Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp. Intersil Corporation
|
SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
SPD649-1SMS SPD645-1SMSS SPD645-1SMSTX SPD645-1SMS |
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 600 V, SILICON, SIGNAL DIODE 400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 225 V, SILICON, SIGNAL DIODE 400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 400 V, SILICON, SIGNAL DIODE 400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 500 V, SILICON, SIGNAL DIODE 400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 300 V, SILICON, SIGNAL DIODE 400 mAMPS 225 ? 600 VOLTS STANDARD RECOVERY RECTIFIER
|
Solid State Devices, Inc. Solid States Devices, Inc SOLID STATE DEVICES INC
|
2N7002DW1T1 |
115 mAmps,60 Volts
|
WILLAS ELECTRONIC CORP
|
|