| PART |
Description |
Maker |
| TP65H050WS |
650V Cascode GaN FET in TO-247
|
Transphorm Inc
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143
RF Cascode Amplifier
|
INFINEON[Infineon Technologies AG]
|
| NTP8G206N NTP8G206NG |
Power GaN Cascode Transistor
|
ON Semiconductor
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| BGA416 |
RF Cascode Amplifier
|
Infineon Technologies A...
|
| BGA416-08 |
RF Cascode Amplifier
|
Infineon Technologies A...
|
| NTE724 |
Integrated Circuit Differential/Cascode Amplifier
|
NTE[NTE Electronics]
|
| APT1201R2SFLL APT1201R2BFLL |
12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TO-247, 3 PIN
POWER MOS 7 FREDFET
|
ADPOW[Advanced Power Technology]
|
| APT25GT120BRDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| 2SC3381 E000839 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS) npn型外延型（低噪声音频放大器应用推荐用于级联，电流镜电路学前，主功放的第一阶段
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS)
|
Toshiba Semiconductor
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
