| PART |
Description |
Maker |
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| 12L100-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VT5200 |
Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| V20WL45-M3 20WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT2045CBP |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSSA3U45 |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
|
| VT10200C-E3 VFT10200C-E3 VBT10200C-E3 VIT10200C-E3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT1045CBP-M3-4W VT1045CBP12 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
