| PART |
Description |
Maker |
| XTSC0201-10NF-30V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| BCR400R Q62702-C2479 |
From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KTY81/121 KTY81/150 |
Silicon temperature sensors
KTY81-1 series; Silicon temperature sensors
|
Philips
|
| BCR400W Q62702-C2481 |
From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
ECONOLINE: REZ - Cost Effective- 1kVDC & 2kVDC Isolation- Custom Solutions Available- No Extern. Components Required- UL94V-0 Package Material- Efficiency to 85%
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LP25-122-KT151W LP12-112-KT151W LP12-163-KT151W LP |
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 16000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 5100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1600 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 150 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 390 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 30 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 33 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.6 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 2.4 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.3 ohm, THROUGH HOLE MOUNT
RTD TEMP SENSOR-PLATINUM
RESISTOR, TEMPERATURE DEPENDENT, PTC, 75 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 20 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 24 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 82 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 6800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 180 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 820 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 680 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 22 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 11 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 13 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 56 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 160 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1.8 ohm, THROUGH HOLE MOUNT
|
RCD Components, Inc.
Golledge Electronics, Ltd.
RCD COMPONENTS INC
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MP3H6115AC6U MP3H6115AC6T1 MP3H6115A6T1 MP3H6115A6 |
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
|
FREESCALE[Freescale Semiconductor, Inc]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY82-152 KTY82-151 KTY82-150 KTY82-122 KTY82-121 |
Silicon temperature sensors
|
PHILIPS[Philips Semiconductors]
|
| KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
|
