| PART |
Description |
Maker |
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT |
Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| KTY81/121 KTY81/150 |
Silicon temperature sensors
KTY81-1 series; Silicon temperature sensors
|
Philips
|
| BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop
|
Infineon
|
| KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 |
Silicon temperature sensors(纭??绱?俯搴?????)
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY83_110 KTY83_120 KTY83_151 KT83A KT83C KT83D KT |
Silicon temperature sensors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
| EXSC0505-220NF |
Temperature Silicon Capacitor
|
Micross Components
|
