PART |
Description |
Maker |
JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSD2N2221AUA JANSD2N2221AL JANSG2N2221A JANSG2N2 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
2N1483E3 2N1485E3 2N1484E3 |
BJT( BiPolar Junction Transistor) PNP Transistor
|
Microsemi
|
2N2905ALE3 JANSM2N2904AL |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|
S13003 |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
S13003A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
MJH16002A MJH16004 |
Bipolar Junction Transistor NPN SILICON POWER TRANSISTORS
|
New Jersey Semiconductors New Jersey Semi-Conductor P...
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2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
5KP170 5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 40V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 80V的五(巴西)总裁| 5A条一c)|11 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 10A条一(c)|10AC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五(巴西)总裁| 10A条一(c)|10AC
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Serpac Electronic Enclosures Atmel, Corp. AUK, Corp.
|
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|