PART |
Description |
Maker |
3SK82 |
Characteristics for FPAK Transistors
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New Jersey Semi-Conduct...
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IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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Integrated Device Technology, Inc.
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PSP-500 PSP-500-5 PSP-500-15 PSP-500-24 PSP-500-48 |
TRANSDUCER,MAG,1.5Vpp @ 10mA 2048HZ @ 80db,50ohm,2 PINS TRANS,WALL,6VDC/500mA,M2 3.5mm,UL/CSA 100/cs TRANS,WALL,5VDC/225mA,F2, 2.5mm x 5.5mm,UL/CSA 40/cs PFC和并行与500W的功 TRANS,WALL,REG,6VDC/200MA, 2.1mmX5.5mm,F2,UL/CUL PFC和并行与500W的功 TRANS,WALL,6VDC/500mA,F1, 2.1mm X 5.5mm,UL,CULC-NEG PFC和并行与500W的功 TRANS,WALL,6VDC/500mA,F2 2.1mm x 5.5mm,UL/CSA 50/cs PFC和并行与500W的功 CONN,DSUB,.590"RT,25P-M, LONG,METAL HOUSING W/PC TABS PFC和并行与500W的功
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Astrodyne, Inc.
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SLF7032T-4R7M1R7-2-PF |
L-Q Frequency Characteristics DC Bias & Temperature Characteristics Temperature Characteristics Temperature Rise
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TDK Electronics
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KF4N80F |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
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MORNSUN Science& Technology Ltd.
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MRF6522-60 MRF6522-70 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04 Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600
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New Jersey Semiconductors
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2N1305 2N1306 2N1307 2N1308 |
Trans GP BJT PNP 0.3A Trans GP BJT NPN 0.3A
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New Jersey Semiconductor
|
BDX47 BDX46-16 |
Trans Darlington PNP 80V 1A 3-Pin TO-126 Trans Darlington NPN 45V 1A 3-Pin TO-126
|
New Jersey Semiconductor
|
IRF730ASTRRPBF IRF730STRL F730ALPBF |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) D2PAK T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) TO-263AB T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-262
|
Vishay Siliconix
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V23870-A1131-B600 V23870-A3132-K600 V23870-A1131-A |
Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx; pigtail Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx, ext. Temp. Range; pigtail Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx TRANS PREBIASED NPN 200MW SOT23 TRANS PREBIASED NPN 200MW SOT323 Metalized Polyester Film Radial Lead Capacitor; Capacitance: .22uF; Voltage: 630V; Case Size: 18.5x14.8 mm; Packaging: Bulk Bi-Directional Pigtail SFF Transceiver 155 Mbit/s, 1310 nm Tx / 1550 nm Rx 双向收发器尾纤准系统155兆比秒,1310纳米发射/接收1550纳米 TRANS PREBIASED NPN 150MW SOT523 双向收发器尾纤准系统155兆比秒,1310纳米发射/接收1550纳米 TRANS PREBIASED NPN SOT323 双向收发器尾纤准系统155兆比秒,1310纳米发射/接收1550纳米 DIODE ZENER SINGLE 500mW 9.7Vz 20mA-Izt 0.0254 0.1uA-Ir 8 SOD-123 3K/REEL 双向收发器尾纤准系统155兆比秒,1310纳米发射/接收1550纳米
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INFINEON[Infineon Technologies AG] http:// Infineon Technologies A...
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OM200F120CMD |
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified) ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
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List of Unclassifed Manufacturers ETC[ETC]
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DS1000 DS1000-75 DS1000-250 DS1000-60 DS1000-100 D |
TRANS SS NPN 45V 100MA SOT-523 5抽头硅延迟线 TRANS SS NPN 50V 100MA SOT23 5抽头硅延迟线 RECTIFIER BRIDGE 1A 200V DB-1 5抽头硅延迟线 RECTIFIER BRIDGE 1A 100V DB-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight RECTIFIER BRIDGE 1A 50V DB-1 TRANSISTOR PNP 45V 100MA SOT563 TRANS SS NPN 50V SOT-323 RECTIFIER BRIDGE 1A 400V DB-1 5-Tap Silicon Delay Line
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Maxim Integrated Products, Inc. Unisem Group DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] MAXIM - Dallas Semiconductor
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