| PART |
Description |
Maker |
| CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025F |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2560025D |
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB |
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| NJG1106KB2 NJG1106KB2-C1 NJG1106KB2-C2 NJG1106KB2- |
800MHz BAND LNA GaAs MMIC 800MHz频段低噪声放大器的GaAs MMIC
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
http://
|
| 1214GN-750V |
GaN Transistors
|
Microsemi
|
| 1011GN-125E 1011GN-125EL |
GaN Transistors
|
Microsemi
|
| 1214GN-500 |
GaN Transistors
|
Microsemi
|
|
