| PART |
Description |
Maker |
| CMPA5585025D |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2560025D |
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA1D1E025F CMPA1D1E025F-AMP |
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA0060002D |
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
|
Cree, Inc
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| NJG1106KB2 NJG1106KB2-C1 NJG1106KB2-C2 NJG1106KB2- |
800MHz BAND LNA GaAs MMIC 800MHz频段低噪声放大器的GaAs MMIC
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
http://
|
| 1214GN-600VHE |
GaN Transistors
|
Microsemi
|
| 2425GN-150CW |
GaN Transistors
|
Microsemi
|
| 0510GN-25-CP |
GaN Transistors
|
Microsemi
|
| 2731GN-110M |
GaN Transistors
|
Microsemi
|
|
