| PART |
Description |
Maker |
| IXYK140N90C3 |
XPTTM 900V IGBTs
|
IXYS Corporation
|
| IXYH40N120B3 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXXH30N60C3 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXXKX100N60C3H1 IXXX100N60C3H1 IXXK100N60C3H1 |
Extreme Light Punch Through IGBT for 20-60kHz Switching
XPTTM 600V GenX3TM w/ Diode
|
IXYS Corporation
|
| IRGPF30F |
900V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| STGW30N90D GW30N90D |
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT N沟道900V - 30A47 IGBT的非常快速PowerMESH
|
STMicroelectronics N.V.
|
| FQAF11N90C |
900V N-Channel Advance Q-FET C-series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
| IRFBF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
Power MOSFET(Vdss=900V/ Rds(on)=3.7ohm/ Id=3.6A)
|
International Rectifier
|
| IXXK200N60C3 |
XPTTM 600V IGBTs
|
IXYS Corporation
|
| IXYX100N120C3 |
1200V XPTTM IGBTs GenX3
|
IXYS Corporation
|
| STU9NC90ZI STU8NC90Z STU8NC90ZI 7291 |
7 A, 900 V, 1.38 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
